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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C606E3-A www..com Issued Date : 2005.01.03 Revised Date : Page No. : 1/4
D44H11E3
Features
* Low VCE(sat) * High BVCEO * Excellent current gain characteristics
Symbol
D44H11E3
Outline
TO-220AB
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25 Power Dissipation @ TC=25 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw380s,Duty2%.
Symbol VCBO VCEO VEBO IC ICP PD PD RJA RJC Tj Tstg
Limits 80 80 6 10 20 (Note 1) 2 50 62.5 2.5 150 -55~+150
Unit V V V A W C/W C/W C C
D44H11E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCEO(SUS) ICES IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. 80 60 40 Typ. 0.3 1.0 50 130 Max. 10 50 0.6 1.5 Unit V A A V V MHz pF
Spec. No. : C606E3-A www..com Issued Date : 2005.01.03 Revised Date : Page No. : 2/4
Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V, IC=0 IC=8A, IB=0.4A IC=8A, IB=0.8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Characteristic Curves
Grounded Emitter Output Characteristics
2500 Collector Current---IC(mA)
Collector Current---IC(mA) 5000 10mA 8mA 4500 4000 3500 3000 2500 2000 1500 1000 500 0 15mA 10mA 5mA IB=0mA 0 1 2 3 4 5 6 25mA 20mA
Grounded Emitter Output Characteristics
2000 1500 1000 500 0 0
6mA 4mA 2mA IB=0mA
2 4 Collector To Emitter Voltage---VCE(V)
6
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
140
Grounded Emitter Output Characteristics
700 2.5mA
Collector Current---IC(mA)
100 80 60 40 20 0 0 1 2 3 4
400uA 300uA 200uA 100uA IB=0uA 5 6
Collector Current---IC(mA)
120
500uA
600 500 400 300 200 100 IB=0uA 0 0 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) 2mA 1.5mA 1mA 500uA
Collector To Emitter Voltage---VCE(V)
D44H11E3
CYStek Product Specification
CYStech Electronics Corp.
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
VCE = 5V
Spec. No. : C606E3-A www..com Issued Date : 2005.01.03 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
10000 VCE(SAT) 1000
IC = 20IB IC = 50IB
Current Gain---H FE
100
VCE = 2V VCE = 1V
100
IC = 10IB
10 1 10 100 1000 10000 Collector Current---IC(mA)
10 1 10 100 1000 10000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Power Dissipation---PD(W) Saturation Voltage---(mV)
VCE(SAT) @ IC = 10IB
Power Derating Curve
2.5 2 1.5 1 0.5 0
1000
100 1 10 100 1000 10000 Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
Power Derating Curve
60
Power Dissipation---PD(W)
50 40 30 20 10 0 0 50 100 150 Case Temperature---TC() 200
D44H11E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Spec. No. : C606E3-A www..com Issued Date : 2005.01.03 Revised Date : Page No. : 4/4
A D
B E C
Marking:
D44H11
H I G 4 P M 3 2 1 N
Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector
K
O
3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical
DIM A B C D E G H
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
D44H11E3
CYStek Product Specification

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